EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BDW47G

器件描述:Darlington Complementary Silicon Power Transistors
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:75.17KB,共8页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 11
Publication Order Number:
BDW42/D
BDW42* - NPN, BDW46,
BDW47* - PNP
Preferred Device
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
• Pb−Free Package is Available**
• High DC Current Gain − h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min) − BDW46
100 Vdc (min.) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
• Monolithic Construction with Built−In Base Emitter Shunt resistors
• TO−220AB Compact Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
V
CEO
80
100
Vdc
Collector-Base Voltage
BDW46
BDW42, BDW47
V
CB
80
100
Vdc
Emitter-Base Voltage V
EB
5.0 Vdc
Collector Current I
C
15 Adc
Base Current I
B
0.5 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
85
0.68
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
JC
1.47 °C/W
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
15 A DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 V, 85 W
http://onsemi.com
1
2
3
4
Device Package Shipping

ORDERING INFORMATION
BDW42 TO−220AB 50 Units/Rail
BDW46 TO−220AB 50 Units/Rail
BDW47G 50 Units/Rail
BDW47
TO−220AB
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TO−220AB
*Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
BDWxx
YYWW
xx = 42, 46 or 47
YY = Year
WW = Work Week