© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 600 V
V
CES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (silicon chip capability) 160 A
I
C90
T
C
= 90°C (silicon chip capability) 80 A
I
L(RMS)
T
C
= 90°C (silicon chip capability) 75 A
I
CM
T
C
= 25°C, 1 ms 300 A
SSOA V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5 Ω I
CM
= 160 A
(RBSOA) Clamped inductive load @ 0.8 V
CES
tsc V
GE
= 15 V, V
CE
= 0.6 V
CES,
T
J
= 125°C10µs
SCSOA R
G
= 5 Ω, non-repetitive
P
C
T
C
= 25°C 500 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque TO-264 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 500 µA, V
GE
= 0 V 600 V
V
GE(th)
I
C
= 8 mA, V
CE
= V
GE
4 8 V
I
CES
V
CE
= V
CES
T
J
= 25°C 200 µA
V
GE
= 0 V T
J
= 125°C 2 mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V ±200 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V 2.5 V
Features
!
International standard packages
!
Very high current, fast switching IGBT
!
Low V
CE(sat)
- for minimum on-state conduction
losses
!
MOS Gate turn-on
- drive simplicity
Applications
!
AC motor speed control
!
DC servo and robot drives
!
DC choppers
!
Uninterruptible power supplies (UPS)
!
Switch-mode and resonant-mode
power supplies
Advantages
!
PLUS 247
TM
package for clip or spring
mounting
!
Space savings
!
High power density
98721B (07/02)
PLUS 247
TM
(IXSX)
G
C
(TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
IXSK 80N60B V
CES
= 600 V
IXSX 80N60B I
C25
= 160 A
V
CE(sat)
= 2.5 V
E
G
C
(TAB)
TO-264 AA
(IXSK)
E
High Current

IGBT
Short Circuit SOA Capability