 Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 2
1 Publication Order Number:
BC858CDXV6T1/D
BC858CDXV6T1,
BC858CDXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-563 which is designed for low
power surface mount applications.
• Lead-Free Solder Plating
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
CEO
-30 V
Collector- Base Voltage V
CBO
-30 V
Emitter- Base Voltage V
EBO
-5.0 V
Collector Current -
Continuous
I
C
-100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-
Ambient
R
JA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Am-
bient
R
JA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
- 55 to +150 °C
1. FR-4 @ Minimum Pad
SOT-563
CASE 463A
PLASTIC
1
2
3
6
5
4
Q
1
(1)(2)(3)
(4) (5) (6)
Q
2
http://onsemi.com
3L = Specific Device Code
D = Date Code
MARKING DIAGRAM
3L D
Device Package Shipping
ORDERING INFORMATION
BC858CDXV6T1 SOT-563 4 mm pitch
4000/Tape & Reel
BC858CDXV6T5 SOT-563 2 mm pitch
8000/Tape & Reel