FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE r
ds(on)
≤ 200Ω
FAST SWITCHING t
d(on)
≤ 3.0ns
ABSOLUTE MAXIMUM RATINGS
1

@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation 300mW
Maximum Current
Drain to Source 30mA
Maximum Voltages
Drain to Gate ±35V
Drain to Source 25V
Gate to Source ±35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage 25 I
D
= 10µA, V
GS
= 0V
V
DS(on)
Drain to Source "On" Voltage 2.0 I
D
= 10mA, V
GS
= 10V
3N170 1.0 2.0
V
GS(th)

Gate to Source
Threshold Voltage
3N171 1.5 2.0
V
V
DS
= 10V, I
D
= 10µA
I
GSS
Gate Leakage Current 10 pA V
GS
= -35V, V
DS
= 0V
I
DSS
Drain Leakage Current "Off" 10 nA V
DS
= 10V, V
GS
= 0V
I
D(on)
Drain Current "On" 10 mA V
GS
= 10V, V
DS
= 10V
g
fs
Forward Transconductance 1000 µS V
DS
= 10V, I
D
= 2.0mA, f = 1.0kHz
r
ds(on)
Drain to Source "On" Resistance 200 Ω V
GS
= 10V, I
D
= 0A, f = 1.0kHz
C
rss
Reverse Transfer Capacitance 1.3 V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
C
iss
Input Capacitance 5.0 V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
C
db
Drain to Body Capacitance 5.0
pF
V
DB
= 10V, f = 1.0MHz
* Body tied to Case.
G
S
D
C
2
14
3
BOTTOM VIEW
TO-72


Linear Integrated Systems
3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE


































Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261