P-TO263-15-1
Data Sheet 1 2001-02-01
TrilithIC
Data Sheet
BTS 7710 GP
1Overview
1.1 Features
Quad D-MOS switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low R
DS ON
: 70 mτ high-side switch, 40 mτ low-side
switch (typical values @ 25 C)
Maximum peak current: typ. 15 A @ 25 C=
Very low quiescent current: typ. 5 ←A @ 25 C=
Small outline, thermal optimized PowerPak
Load and GND-short-circuit-protection
Operates up to 40 V
Status flag diagnosis
Overtemperature shut down with hysteresis
Internal clamp diodes
Isolated sources for external current sensing
Under-voltage detection with hysteresis
PWM frequencies up to 50 kHz

1.2 Description
The BTS 7710 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7710 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS
®
technology
which combines low R
DS ON
vertical DMOS power stages with CMOS control circuitry.
The high-side switch is fully protected and contains the control and diagnosis circuitry.
To achieve low R
DS ON
and fast switching performance, the low-side switches are
manufactured in S-FET logic level technology. The equivalent standard product is the
BUZ 103 SL.
In contrast to the BTS 7710 G, which consists of the same chips in an P-DSO-28
package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which
opens up applications with even higher currents in the automotive and industrial area.
Type Ordering Code Package
BTS 7710 GP Q67006-A9400 P-TO263-15-1