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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BCX51

器件描述:SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
器件厂商:ZETEX [Zetex Semiconductors]
厂商主页:http://www.zetex.com/
文件大小:28.4KB,共1页
Sponsor by e络盟
器件资料摘要:
S
OT8
9 PNP
SILIC
ON PLA
NA
R

M
E
D
IUM
P
OWER
TR
ANSIS
TOR
S
I
SSUE 3

FEBRU
ARY
1996
a37
CO
M
PLEM
ENTA
R
Y
TYPE –
BC
X
5
1

BCX54
BC
X
5
2
– BCX55
BC
X
5
3
– BCX56
P
ARTM
ARKIN
G D
ETAI
L
S


BCX51
– A
A
B
C
X
5
2


AE
BCX53

AH
BCX51-
1
0
– A
C
B
C
X
5
2-
1
0

AG
BCX53-10

AK
BCX51-
1
6
– A
D
B
C
X
5
2-
1
6

AM
BCX53-16

AL
AB
SOL
UTE
M
AXI
MUM
RATI
NGS.
P
A
R
A
M
E
T
E
R
S
Y
M
B
O
L
BCX
5
1
BC
X
5
2
BCX5
3
UNIT
Collector-Base
Vo
ltage
V
CB
O
-4
5
-
60
-1
00
V
Collector-Emitter
Voltage
V
CE
O
-4
5
-
60
-80
V
Emitter
-
Base Voltage
V
EB
O
-5
V
P
e
a
k
P
u
l
s
e Cu
r
ren
t
I
CM
-
1.5
A
Contin
uo
us Co
lle
ctor
Cur
r
e
n
t
I
C
-1
A
Pow
e
r
D
i
ssipa
tio
n
a
t
T
am
b
=2
5°C
P
to
t
1W
O
p
era
ti
n
g
an
d
Sto
rag
e T
e
m
p
era
tu
r
e
Ran
g
e
T
j
:T
stg
-
6
5
to +1
5
0
°
C
E
L
ECTR
IC
AL CH
AR
ACTER
ISTI
C
S

(
a
t T
am
b
=
25
°
C

unle
s
s

ot
h
e
rwi
s
e

sta
t
e
d
)
.
PA
RA
MET
ER
S
Y
MBOL
MIN
.
TYP
.
MA
X.
UN
IT
C
O
N
D
IT
IO
NS.
Collector-Base
BCX
5
3
Br
e
a
k
dow
n BCX
5
2
Voltage
BCX
5
1
V
(BR
)
CBO
-10
0
-60 -45
V V V
I
C
=-
10
0
µ
A
I
C
=-
1
0
0
µ
A
I
C
=-
1
0
0
µ
A
Collector-Emitter
BCX
5
3
Br
e
a
k
dow
n BCX
5
2
Voltage
BCX
5
1
V
(BR
)
CE
O
-80 -60 -45
VI
C
=-
10
m
A
*
I
C
=-
1
0
m
A
*
I
C
=-
1
0
m
A
*
Emitter
-
Base
Br
e
a
k
dow
n Vo
lta
g
e
V
(BR
)
E
B
O
-5
V
I
E
=-
10
µ
A
Collector Cu
t
-
O
ff Curr
ent
I
CB
O
-0
.
1
-2
0
µ
A
µ
A
V
CB
=-
30
V
V
CB
=-
30
V
,
T
am
b
=1
50°
C
Emi
tter
Cu
t-O
ff Cu
r
r
e
n
t
I
EB
O
-2
0
n
A
V
EB
=-
4
V
Colle
ctor
-Emitte
r
Sa
tu
r
a
ti
on
Vol
t
age
V
CE
(sa
t)
-0
.
5
V
I
C
=-5
00m
A,
I
B
=
-
50m
A*
Ba
se-Emi
t
t
er
Tur
n-O
n
Vo
lta
g
e
V
BE
(o
n
)
-1
.
0
V
I
C
=-5
00m
A,
V
CE
=-
2V
*
Sta
t
i
c
Fo
rward
Cu
r
r
e
n
t
Tra
n
sf
er Ratio
h
FE
-10 -16
25 40 25 63 10
0
25
0
16
0
25
0
I
C
=-
5
m
A,

V
CE
=-
2V
*
I
C
=-1
50m
A,
V
CE
=-
2V
*
I
C
=-5
00m
A,
V
CE
=-
2V
*
I
C
=-1
50m
A,
V
CE
=-
2V
*
I
C
=-1
50m
A,
V
CE
=-
2V
*
Tr
a
n
sition
F
r
e
que
n
c
y
f
T
15
0
M
H
z
I
C
=
-
50
mA
, V
CE
=-10V,
f=10
0M
Hz
Outp
ut Ca
pa
cita
nce
C
obo
25
p
F
V
CB
=-10
V, f=
1M
Hz
*
Mea
sure
d
u
n
de
r pulsed conditions. Pu
ls
e width=3
0
0
µ
s. Duty
cy
cle

2%
BC
X
5
1
BC
X
5
2
BC
X
5
3
C
C
B
E
SOT89
3 -
3
4