Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC327 Unit
Collector–Emitter Voltage V
CEO
–45 Vdc
Collector–Base Voltage V
CBO
–50 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current – Continuous I
C
–800 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA, I
B
= 0)
V
(BR)CEO
–45 – –
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= –100 µA, I
E
= 0)
V
(BR)CES
–50 – –
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 A, I
C
= 0)
V
(BR)EBO
–5.0 – – Vdc
Collector Cutoff Current
(V
CB
= –30 V, I
E
= 0)
I
CBO
– – –100
nAdc
Collector Cutoff Current
(V
CE
= –45 V, V
BE
= 0)
I
CES
– – –100
nAdc
Emitter Cutoff Current
(V
EB
= –4.0 V, I
C
= 0)
I
EBO
– – –100 nAdc
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
1 Publication Order Number:
BC327/D
BC327,
BC327-16,
BC327-25,
BC327-40
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER