BC327
器件描述：Amplifier Transistors(PNP Silicon)
器件厂商：ONSEMI [ON Semiconductor]
文件大小：116.88KB，共4页
Sponsor by e络盟器件资料摘要：
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
BC327/D
BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−45 Vdc
Collector−Base Voltage V
CES
−50 Vdc
Collector−Emitter Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−800 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction−to−Case R
C0113JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BCxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
C0071 = Pb−Free Package
MARKING DIAGRAM
TO−92
CASE 29
STYLE 17
1
2
3
(Note: Microdot may be in either location)
http://onsemi.com
BC
xx
AYWW C0071
C0071
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
January, 2006 − Rev. 3
1 Publication Order Number:
BC327/D
BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−45 Vdc
Collector−Base Voltage V
CES
−50 Vdc
Collector−Emitter Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−800 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction−to−Case R
C0113JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BCxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
C0071 = Pb−Free Package
MARKING DIAGRAM
TO−92
CASE 29
STYLE 17
1
2
3
(Note: Microdot may be in either location)
http://onsemi.com
BC
xx
AYWW C0071
C0071
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION