03/2004
AWT6252
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
Figure 1: Block Diagram
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 x 4 x 1.5 mm surface
mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a
50 Ω system.
FEATURES
• InGaP HBT Technology
High Efficiency: 39%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1 µA
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50 Ω System
Low Profile Miniature Surface Mount Package:
1.56mm Max
APPLICATIONS
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
A
WT6252
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND