256K (32K x 8)
5-volt Only
Flash Memory
AT29C256
Rev. 0046P–FLASH–10/04
such that any sector can typically be written to in excess of 10,000 times.
PLCC and LCC Top View
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2
GND
DC
I/O3 I/O4 I/O5
A7 A12 WE DC VCC A14 A13
TSOP Top View
Type 1
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
A14
VCC
WE
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
Features
• Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Page Program Operation
– Single Cycle Reprogram (Erase and Prog
– Internal Address and Data Latches for 64
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Program Cycle Times
– Page (64 Byte) Program Time – 10 ms
– Chip Erase Time – 10 ms
DATA Polling for End of Program Detection
Low-power Dissipation
– 50 mA Active Current
–300 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Rang
Description
The AT29C256 is a five-volt-only in-system F
only memory (PEROM). Its 256K of memory
Manufactured with Atmel’s advanced nonvolat
access times to 70 ns with power dissipation
deselected, the CMOS standby current is les
ram)
Bytes
es
lash programmable and erasable read
is organized as 32,768 words by 8 bits.
ile CMOS technology, the device offers
of just 275 mW. When the device is
s than 300 µA. The device endurance is
1