A D V A N C E D S E M I C O N D U C T O R, I N C REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
F
I
F
= 10 mA 550 mV
I
R
V
R
= 1.0 V 1.0 µA
V
BR
I
R
= 100 µA 5.0 V
C
T0
V
R
= 0 V f = 1.0 MHz 1.0 pF
NF f = 890 MHz 10 dB
Q
S
I
F
= 10 mA 1.6 pC




SILICON DIODE
FH1100

DESCRIPTION:
The ASI FH1100 is a Silicon Diffused
Hot Carrier Diode.

FEATURES INCLUDE:
• Q
S
= 1.6 pC Typ.
• C = 1.0 pF Max. @ f = 890 MHz
• Hermetic Glass Package

MAXIMUM RATINGS
I
F
10 mA
V
R
5.0 V
P
DISS
100 mW @ T
C
= 25 °C
T
J
-65 °C to +125

°C
T
STG
-65 °C to +150

°C
T
soldering
+260 °C for 5 Seconds
PACKAGE STYLE DO-7