A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS
V
R
I
R
= 10 µA 2.0 V
V
F
I
F
= 1.0 mA 0.29 V
I
F
V
F
= 0.5 V 2.0 mA
I
R
V
R
= 0.5 V 2.0 µA
C
T
V
R
= 0 V f = 1.0 MHz .27 pF
NF I
F
= 0.5 mA f = 30 GHz 6.0 dB

SILICON SCHOTTKY BARRIER DIODE
BAT38
PACKAGE STYLE

DESCRIPTION:
The ASI BAT38 is a silicon Schottky
barrier mixer diode, Designed for use
in Ka frequency band Applications.


FEATURES INCLUDE:
• Low R
S
__
5.0Ω
• Low NF 8.5 Db Typ.
• Frequency Range 26 to 40 GHz
• Available as Matched pairs by adding
the MP to the part number. Matching
criteria is ± 10% on rectified current
and within 150 Ω i.f. impedance.
MAXIMUM RATINGS
V
R
2.0 V
P
DISS
250 mW @ T
C
= 25 °C
T
J
-55 °C to +100 °C
T
STG
-55 °C to +100 °C