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©

1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14058EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, ID = 2.5 V)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current(DC) (TC = 25°C) ID(DC) ±5.0 A
Drain Current(pulse)
Note1
ID(pulse) ±20 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 5.0 A
Single Avalanche Energy
Note2
EAS 16.7 mJ
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3297 Isolated TO-220
(Isolated TO-220)