Power MOSFETs
1
Publication date: February 2004 SJG00033AED
2SK3560
Silicon N-channel power MOSFET
For PDP/For high-speed switching
■ Features
• Low on-resistance, low Q
g
• High avalanche resistance
■ Absolute Maximum Ratings T
C
= 25°C
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Gate-drain surrender voltage V
DSS
I
D
= 1 mA, V
GS
= 0 230 V
Diode forward voltage V
DSF
I
DR
= 30 A, V
GS
= 0 −1.5 V
Gate threshold voltage V
th
V
DS
= 25 V, I
D
= 1 mA 2 4 V
Drain-source cutoff current I
DSS
V
DS
= 184 V, V
GS
= 0 100 µA
Gate-source cutoff currentt I
GSS
V
GS
= ±30 V, V
DS
= 0 ±1 µA
Drain-source on resistance R
DS(on)
V
GS
= 10 V, I
D
= 15 A 55 74 mΩ
Forward transfer admittance Y
fs
 V
DS
= 25 V, I
D
= 15 A 8 19 S
Short-circuit forward transfer capacitance C
iss
V
DS
= 25 V, V
GS
= 0, f = 1 MHz 2 330 pF
(Common-source)
Short-circuit output capacitance C
oss
356 pF
(Common-source)
Reverse transfer capacitance C
rss
44 pF
(Common-source)
Turn-on delay time t
d(on)
V
DD
≈ 100 V, I
D
= 15 A 39 ns
Rise time t
r
R
L
≈ 6.7 Ω, V
GS
= 10 V 37 ns
Turn-off delay time t
d(off)
221 ns
Fall time t
f
46 ns
Reverse recovery time t
rr
L = 230 µH, V
DD
= 100 V 164 ns
Reverse recovery charge Q
rr
I
DR
= 15 A, di /dt = 100 A/ µs 853 nC
0 to 0.5
123
(8.9)
(10.2)
0 to 0.3
(2.1)
(6.4)
(1.4)
10.5±0.3
4.6±0.2
1.4±0.1
0.8±0.1
2.5±0.2
1.4±0.1
2.54±0.3
10.1
±
0.3
3.0
±
0.5
(1.4)
1.5
±
0.3
0.6
±
0.1
■ Electrical Characteristics T
C
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Rating Unit
Drain-source surrender voltage V
DSS
230 V
Gate-source surrender voltage V
GSS
±30 V
Drain current
I
D
30 A
Peak drain current I
DP
120 A
Power
P
D
50 W
dissipation
T
a
= 25°C3
Channel temperature T
ch
150 °C
Storage temperature T
stg
−55 to +150 °C
Internal Connection
G
S
D