2SK3541
Transistor
Small switching (30V, 0.1A)
2SK3541
!Applications
Interfacing, switching (30V, 100mA)
!Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
!Structure
Silicon N-channel
MOSFET
!External dimensions (Units : mm)
ROHM : VMT3
Abbreviated symbol : KN
(1) Gate
(2) Source
(3) Drain
0~0.1
(3)0.32
0.81.2
0.13
0.5
0.22
0.4
0.4
1.2
0.80.2
0.15Max.
0.2
(2)
(1)
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
VDSS
VGSS
IDR
PD
∗
2
Tch
30 V
V
mA
mA
mW
°C
±20
100ID
IDRP
∗
1
mA
IDP
∗
1
Continuous
Pulsed
Continuous
Pulsed
mA400
100
400
150
150
Tstg °C−55~+150
Symbol Limits Unit
∗1 Pw≤10µs, Duty cycle<1%
∗2 With each pin mounted on the recommended lands.
Reverse drain
current
!Equivalent circuit
Drain
Source
Gate
∗ Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.