Silicon MOSFETs (Small Signal)
1
Publication date: January 2004 SJF00035BED
2SK3539
Silicon N-channel MOSFET
For switching
■ Features
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= 10 µA, V
GS
= 0 50 V
Drain-source cutoff current I
DSS
V
DS
= 50 V, V
GS
= 0 1.0 µA
Gate-Source cutoff current I
GSS
V
GS
= ±7 V, V
DS
= 0 ±5.0 µA
Gate threshold voltage V
th
I
D
= 1.0 µA, V
DS
= 3 V 0.9 1.2 1.5 V
Drain-source ON resistance R
DS(on)
I
D
= 10 mA, V
GS
= 2.5 V 8 15 Ω
I
D
= 10 mA, V
GS
= 4.0 V 6 12
Forward trancfer admitance Y
fs
 I
D
= 10 mA, V
DS
= 3 V, f = 1 kHz 20 60 mS
Short-circuit forward transfer C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz 12 pF
capacitance (Common source)
Short-circuit output capacitance (Common source) C
oss
7pF
Reverse transfer capacitance (Common source) C
rss
3p
Turn-on time
*
t
on
V
DD
= 3 V, V
GS
= 0 V to 3 V, R
L
= 470 Ω 200 ns
Turn-off time
*
t
off
V
DD
= 3 V, V
GS
= 3 V to 0 V, R
L
= 470 Ω 200 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
:t
on
, t
off
test circuit
Marking Symbol: 5F
V
OUT
V
DD
= 3 V
V
GS
= 3.0 V
50 Ω
470 Ω
100
µ
F
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
Parameter Symbol Rating Unit
Drain-source voltage V
DS
50 V
Gate-source voltage (Drain open) V
GSO
±7V
Drain current I
D
100 mA
Peak drain current I
DP
200 mA
Power dissipation P
D
150 mW
Channel temperature T
ch
150 °C
Storage temperature T
stg
−55 to +150 °C