2SK3475
2002-01-09 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475

VHF- and UHF-band Amplifier Applications



Gb7G20 Output power: P
O
= 630 mW (min)
Gb7G20 Gain: G
P
= 14.9dB (min)
Gb7G20 Drain efficiency: η
D
= 45% (min)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
20 V
Gain-source voltage V
GSS
±5 V
Drain current I
D
1 A
Power dissipation P
D
(Note 1) 3 W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−45~150 °C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking



Caution
Please take care to avoid generating static electricity when handling this transistor.

Unit: mm


JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1D
Type name
1
W B
2 3
1. Gate
2. Source
3. Drain