Silicon Junction FETs (Small Signal)
1
Publication date: July 2003 SJF00036AED
2SK3396
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
■ Features
• Low gate-source cutoff current I
GSS
• Small capacitance of short-circuit forward transfer capacitance
(common source) C
iss
, short-circuit output capacitance (common
source) C
oss
, reverse transfer capacitance (common source) C
rss
■ Absolute Maximum Ratings T
a
= 25°C
1: Source
2: Drain
3: Gate
SSSMini3-F1 Package
Unit: mm
Parameter Symbol Rating Unit
Gate-drain voltage (Source open) V
GDO
−40 V
Gate-source voltage (Drain open) V
GSO
−40 V
Gate current I
G
10 mA
Drain current I
D
1mA
Power dissipation P
D
100 mW
Channel temperature T
ch
125 °C
Storage temperature T
stg
−55 to

+125 °C
Parameter Symbol Conditions Min Typ Max Unit
Gate-drain surrender voltage V
GDS
I
G
= −10 µA, V
DS
= 0 −40 V
Drain-source cutoff current I
DSS
V
DS
= 10 V, V
GS
= 0 30 200 µA
Gate-source cutoff current I
GSS
V
GS
= −20 V, V
DS
= 0 − 0.5 nA
Forward transfer admittance Y
fs
 V
DS
= 10 V, V
GS
= 0, f = 1 kHz 0.05 mS
Gate-source cutoff voltage V
GSC
V
DS
= 10 V, I
D
= 1 µA −1.3 −3.0 V
Short-circuit forward transfer capacitance C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz 1.0 pF
(Common source)
Short-circuit output capacitance C
oss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz 0.4 pF
(Common source)
Reverse transfer capacitance C
rss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz 0.4 pF
(Common source)
1.20
±
0.05
0.52
±
0.03
0 to 0.01
0.15 max.
5
°
0.15 min.
0.80
±
0.05
0.15 min.
0.33
(0.40)(0.40)
12
3
5°
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: EB