Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 6/99A
Low Noise/Medium Power
GaAs MESFET Chips
Features
a73 Low Noise Figure, 0.6 dB @ 4 GHz
a73 20 dBm Output Power @ 18 GHz
a73 High Associated Gain, 13 dB @ 4 GHz
a73 High Power Added Efficiency, 25%
a73 Broadband Operation, DC–26 GHz
a73 Available in Tape and Reel Packaging
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25 µm and
a total gate periphery of 400 µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits.They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
AFM04P3-212, AFM04P3-213
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
) 90.0 140.0 190.0 mA
Transconductance (gm)
V
DS
= 2 V, V
GS
= 0 V
60.0 80.0 mS
Pinch-Off Voltage (V
P
)V
DS
= 5 V, I
DS
= 1 mA 1.0 3.0 5.0 -V
Gate to Drain Breakdown I
GD
= -400 µA 8.0 12.0 -V
Voltage (V
bgd
)
Noise Figure (NF) 0.6 dB
Associated Gain (G
A
)
V
DS
= 2 V, I
DS
= 25 mA, F = 4 GHz
13.8 dB
Output Power at 1 dB 20.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source Gate
Source
212
213
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -4 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1 mA
Total Power Dissipation (P
T
) 700 mW
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings