Power MOSFETs
1
Publication date: January 2004 SJG00029BED
2SK3192
Silicon N-channel power MOSFET
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance R
on
• No secondary breakdown
■ Applications
• PDP
• Switching mode regulator
■ Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Drain-source surrender voltage V
DSS
250 V
Gate-source surrender voltage V
GSS
±30 V
Drain current I
D
±30 A
Peak drain current I
DP
±120 A
Avalanche energy capability
*
EAS 925 mJ
Power dissipation P
D
100 W
T
a
= 25°C3
Channel temperature T
ch
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= 1 mA, V
GS
= 0 250 V
Drain-source cutoff current I
DSS
V
DS
= 200 V, V
GS
= 010µA
Gate-source cutoff current I
GSS
V
GS
= ±30 V, V
DS
= 0 ±1 µA
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2 4 V
Drain-source ON resistance R
DS(on)
V
GS
= 10 V, I
D
= 15 A 50 68 mΩ
Forward transfer admittance Y
fs
 V
DS
= 10 V, I
D
= 15 A 8 15 S
Short-circuit forward transfer capacitance C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz 4 200 pF
(Common source)
Short-circuit output capacitance C
oss
1 600 pF
(Common source)
Reverse transfer capacitance C
rss
650 pF
(Common source)
Turn-on delay time t
d(on)
V
DD
= 100 V, I
D
= 15 A, R
L
= 6.7 Ω 45 ns
Rise time t
r
V
GS
= 10 V 115 ns
Turn-off delay time t
d(off)
330 ns
Fall time t
f
130 ns
■ Electrical Characteristics T
C
= 25°C ± 3°C
15.0±0.3 5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.21.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder Dip
(2.3)
(3.2)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Note)
*
:L = 1.74 mH, I
L
= 30 A, V
DD
= 50 V, 1 pulse, T
a
= 25°C
Internal Connection
G
S
D
Marking Symbol: K3192