2SK3131
2004-07-06 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3131

Chopper Regulator DC−DC Converter and Motor Drive
Applications


null Fast reverse recovery time : trr = 105 ns (typ.)
null Built-in high-speed free-wheeling diode
null Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.)
null High forward transfer admittance : |Yfs| = 35 S (typ.)
null Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
null Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage V
DSS
500 V
Drain−gate voltage (R
GS
= 20 kΩ) V
DGR
500 V
Gate−source voltage V
GSS
±30 V
DC (Note 1) I
D
50 A
DC Drain current
Pulse (Note 1) I
DP
200 A
Drain power dissipation (Tc = 25°C) P
D
250 W
Single pulse avalanche energy
(Note 2)
E
AS
525 mJ
Avalanche current I
AR
50 A
Repetitive avalanche energy (Note 3) E
AR
25 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
0.5 °C / W
Thermal resistance, channel to
ambient
R
th (ch−a)
35.7 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 357 µH, R
G
= 25 Ω, I
AR
= 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.

Unit: mm



JEDEC —
JEITA —
TOSHIBA 2-21F1B
Weight: 9.75 g (typ.)