2SK3130
2004-07-06 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130

Switching Regulator Applications



• Reverse-recovery time: t
rr = 85 ns
• Built-in high-speed flywheel diode
• Low drain-source ON resistance: R
DS (ON) = 1.12 Ω (typ.)
• High forward transfer admittance: |Y
fs| = 5.0 S (typ.)
• Low leakage current: I
DSS = 100 µA (max) (VDS = 600 V)
• Enhancement model: V
th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
6
Drain current
Pulse (Note 1) I
DP
24
A
Drain power dissipation (Tc = 25°C) P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
345 mJ
Avalanche current I
AR
6 A
Repetitive avalanche energy (Note 3) E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 16.8 mH, R
G
= 25 Ω, I
AR
= 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution


Unit: mm


JEDEC ―
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)