Power Transistors
1
Publication date: November 2002 SJD00291AED
2SC5809
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching (Fall time t
f
is short)
• High collector-base voltage (Emitter open) V
CBO
• Low collector-emitter saturation voltage V
CE(sat)
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
B
C
E
Marking Symbol: C5809
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
800 V
Collector-emitter voltage (Base open) V
CEO
500 V
Emitter-base voltage (Collector open) V
EBO
8V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power
T
C
= 25°CP
C
30 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 0 500 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 800 V, I
E
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 5 V, I
C
= 0 100 µA
Forward current transfer ratio h
FE1
V
CE
= 5 V, I
C
= 0.1 A 15 
h
FE2
V
CE
= 5 V, I
C
= 3 A 8
Collector-emitter saturation voltage V
CE(sat)
I
C
= 3 A, I
B
= 0.6 A 0.3 0.6 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz 8 MHz
Turn-on time t
on
I
C
= 3.0 A, Resistance loaded 1.1 µs
Storage time t
stg
I
B1
= 0.6 A, I
B2
= − 0.6 A 2.0 µs
Fall time t
f
V
CC
= 200 V 0.3 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.