1
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD874 and 2SD874A
n
Features
l Large collector power dissipation P
C
.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SB766
2SB766A
2SB766
2SB766A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –500mA
*2
V
CE
= –5V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
50
typ
– 0.2
– 0.85
200
20
max
– 0.1
340
– 0.4
–1.2
30
Unit
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
2SB766 AQ AR AS
2SB766A BQ BR BS
Marking symbol : A
(2SB766)
B
(2SB766A)
Unit: mm
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Marking
Symbol
2SB766
2SB766A
2SB766
2SB766A
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion