Power Transistors
1
Publication date: September 2003 SJD00268AED
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
■ Features
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
2A
Peak collector current
*
I
CP
4A
Base current I
B
1A
Collector power T
C
= 25°CP
C
10 W
dissipation 1
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 25 mA, I
B
= 060V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 80 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 40 V, I
B
= 0 100 µA
Emiter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 0 100 µA
Forward current transfer ratio
*
h
FE
V
CE
= 4 V, I
C
= 0.5 A 500 2 500 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 2 A, I
B
= 0.05 A 1 V
Transition frequency f
T
V
CE
= 12 V, I
C
= 0.2 A, f = 10 MHz 50 MHz
■ Electrical Characteristics T
a
= 25°C
6.5±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
(1.8)
(5.5)
0.75±0.1
2.3±0.1
4.6±0.1
123
0.5±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.8 max.
1.0
±
0.2
7.3
±
0.1
1.8
±
0.1
2.5
±
0.1
5.3±0.1
4.35±0.1
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R S
h
FE
500 to 1 000 800 to 1 500 1 200 to 2 500
Note) Self-supported type package is also prepared.
Note) Non-repetitive peak collector current