Power Transistors
1
Publication date: May 2003 SJD00239BED
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• High forward current transfer ratio h
FE
• Built-in 60 V Zener diode between base to collector
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 µA, I
E
= 0 50 85 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 50 85 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 01µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 4 V, I
C
= 02m
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 1.0 A 6 500 40 000 
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= 1.0 A, I
B
= 1.0 mA 1.8 V
Base-emitter saturation voltage
*
V
BE(sat)
I
C
= 1.0 A, I
B
= 1.0 mA 2.2 V
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power
T
C
= 25°CP
C
1.2 W
dissipation 5.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
Note)
*
: With a 100 mm × 100 mm × 2 mm Al heat sick.
B
ER
1
R
2
C
+25
−10
+25
−10