Power Transistors
1
Publication date: February 2004 SJD00305AED
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
■ Features
• High breakdown voltage (V
CBO
≥ 1 700 V)
• High-speed switching (t
f
< 200 nsec)
• Wide safe operation area
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 1 000 V, I
E
= 050µA
V
CB
= 1 700 V, I
E
= 01m
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 7 V, I
C
= µA
Forward current transfer ratio h
FE
V
CE
= 5 V, I
C
= 8.5 A 5 12 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 8.5 A, I
B
= 2.13 A 3 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 8.5 A, I
B
= 2.13 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz 3 MHz
Storage time t
stg
I
C
= 8.5 A, Resistance loaded 3.0 µs
Fall time t
f
I
B1
= 2.13 A, I
B2
= −4.25 A 0.2 µs
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
1 700 V
Collector-emitter voltage (E-B short) V
CES
1 700 V
Collector-emitter voltage (Base open) V
CEO
600 V
Emitter-base voltage (Collector open) V
EBO
7V
Base current I
B
8A
Collector current I
C
17 A
Peak collector current
*
I
CP
27 A
Collector power dissipation P
C
65 W
T
a
= 25°C 3.5
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
15.5±0.5 3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
5˚
5˚
5˚
5˚
5˚
10.9±0.5
1
5˚
23
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
±
0.3
5.5
±
0.3
(2.0)
26.5
±
0.5
(23.4)
22.0
±
0.5
18.6
±
0.5
(2.0)
φ 3.2±0.1
(4.5)
1: Base
2: Collector
3: Emitter
TOP-3E-A1 Package
Note)
*
: Non-repetitive peak collector current
Internal Connection
Marking Symbol: C5904
B
C
E