2SC5824
Transistor
1/3
Power transistor (60V, 3A)
2SC5824


!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.


!Applications
!External dimensions (Units : mm)
Each lead has same dimensions
Abbreviated symbol : UP
MPT3
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
NPN Silicon epitaxial planar transistor


!Structure
Low frequency amplifier
High speed switching


!Packaging specifications
Taping
2SC5824
Type T100
1000
Package
Basic ordering unit
(pieces)
Code




!Absolute maximum ratings (Ta=25°C)
Parameter
V
V
V
A
mW
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
∗2
∗1
°C
A
°C
VCBO
VCEO
IC
PC
Tj
VEBO
ICP
Tstg
Symbol
60
60
6
3
6
500
W
∗3
PC 2.0
150
−55~+150
Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature