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ASITPV591

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:23.94KB,共2页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 22 V
BVCBO IC = 10 mA 45 V
BVEBO IE = 1.0 mA 3.5 V
hFE VCE = 5.0 V IC = 100 mA 20 200 ---
Cob VCB = 28 V f = 1.0 MHz 3.0 pF
Pg
Pref = 0.5 W f = 860 MHz
SOUND CARRIER = -7.0 dB
VISION CARRIER = -8.0 dB CHROMA = -16 dB
13 dB
IMD
Pref = 0.5 W f = 860 MHz
VCE = 20 V IC = 150 mA SOUND CARRIER =-7.0dB
VISION CARRIER = -8.0 dB CHROMA = -16 dB
-58 dB
NPN SILICON RF POWER TRANSISTOR
TPV591
DESCRIPTION:
The ASI TPV591 is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC 300 mA
VCB 45 V
PDISS 5.3 W @ TC = 25 OC
TJ -55 OC to +200 OC
TSTG -55 OC to +200 OC
qJC 33.0 OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER