EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SC4725

器件描述:High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz)
器件厂商:ROHM [Rohm]
厂商主页:http://www.rohm.com/
文件大小:75.61KB,共4页
Sponsor by e络盟
器件资料摘要:
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Transistors
Rev.A 1/3
High-Frequency Amplifier Transistor
(20V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K


zFeatures
1) High transition frequency. (Typ. fT = 1.5GHz)
2) Small rbb’⋅Cc and high gain. (Typ. 6ps)
3) Small NF.


zPackaging specifications and hFE
Type 2SC4725
EMT3
NP
AC

TL
3000
2SC5661
VMT3
NP
AC

T2L
8000
2SC4082
UMT3
NP
1C

T106
3000
2SC3837K
SMT3
NP
AC

T146
3000
∗ Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit
(pieces)



z Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
20
3
50
0.2
150
−55 to +150
Unit
V
V
V
mA
0.15
2SC4082, 2SC3837K
2SC5661, 2SC4725
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature









zExternal dimensions (Unit : mm)
(2) Base
(3) Collector
(1) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
Each lead has same dimensions
0.7
0.15
0.1Min.
0.55
0to0.1
0.2
1.6
1.61.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
2.0
1.25
2.1
0.3
0.15
0to0.1
0.1to0.4
(
3
)
0.9
0.7
0.2
0.65
(
2
)
1.3
(
1
)
0.65
0.8
0.15
0to0.1
0.3to0.6
1.1
(
2
)
(
1
)
2.8
1.6
0.4 (
3
)
2.91.9
0.95
0.95
2SC4725
2SC4082
2SC3837K
2SC5661
ROHM : VMT3
ROHM : EMT3
EIAJ : SC-75A
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
(1) Base
(2) Emitter
(3) Collector
0to0.1
(3)0.32
0.81.2
0.13
0.5
0.22
0.4
0.4
1.2
0.80.2
0.15Max.
0.2
(2)
(1)
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
Cob
rbb'·Cc
NF
30
18
3


56
600







1500
0.9



0.5
0.5
180

1.5
V
V
V
µA
µA

MHz
pF
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 15V
VEB = 2V
VCE(sat) −−0.5 V IC/IB = 20mA/4mA
VCE/IC = 10V/10mA
VCE = 10V , IE = −10mA , f = 200MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50Ω
− 613ps
− 4.5 − dB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Collector-base time constant
Noise factor