2SC4774 / 2SC4713K
Transistors
Rev.A 1/2
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K


zFeatures
1) Very low output-on resistance (Ron).
2) Low capacitance.


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
12
6
3
50
0.2
150
−55 to +150
Unit
V
V
V
mA
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zPackaging specifications and hFE
Type 2SC4774
UMT3
S
BM
∗
T106
3000
2SC4713K
SMT3
S
BM
∗
T146
3000
∗
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)








zExternal dimensions (Unit : mm)
2SC4774
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
2SC4713K
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.01.3
(
1
)
0.65
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0.8
0.15
0~0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.91.9
0.95
0.95



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
12
6
3
−
−
−
270
300
−
−
−
−
−
−
−
−
800
1
−
−
−
0.5
0.5
0.3
560
−
1.7
V
V
V
µA
µA
V
−
MHz
pF
IC=10µA
IC=1mA
IE=10µA
VCB=10V
VEB=2V
IC/IB=10mA/1mA
VCE/IC=5V/5mA
VCE=5V, IE= −10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
Ron − 2 −ΩIB=3mA, VI=100mVrms, f=500kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance