Power Transistors
1
Publication date: January 2003 SJD00100BED
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Excellent collector current I
C
characteristics of forward current
transfer ratio h
FE
• High transition frequency f
T
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 0 120 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= 10 V, I
C
= 150 mA 90 220 
h
FE2
V
CE
= 5 V, I
C
= 500 mA 65 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 1.0 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
Rank Q R
h
FE1
90 to 155 130 to 220
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
120 V
Collector-emitter voltage (Base open) V
CEO
120 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
0.5 A
Peak collector current I
CP
1.0 A
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1