2SB1697
Transistors
Rev.A 1/2
Low Frequency Amplifier (-12V, -2A)
2SB1697


zFeatures
Low VCE(sat)
VCE(sat) ≤ −180mV
(IC /IB=−1A/−50mA)













zExternal dimensions (Unit : mm)

Abbreviated symbol: FV
Each lead has same dimensions
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
(1)Base
(2)Collector
(3)Emitter



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−15
−12
−6
−2
500
150
−55 to +150
−4
∗1
Unit
V
V
V
A(DC)
A(Pulse)
mW
°C
°C
∗2
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, PW=1ms
When mounted on a 40x40x0.7 mm ceramic board.


zPackaging specifications
2SB1697
T100
1000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 360 − MHz VCE= −2V, IE=200mA, f=100MHz
BVCBO −15 −−V IC= −10µA
BVCEO −12 −−V IC= −1mA
BVEBO −6 −−V IE= −10µA
ICBO −−−100 nA VCB= −15V
IEBO −−−100 nA VEB= −6V
VCE(sat) −−100 −180 mV IC/IB= −1A/ −50mA
hFE 270 − 680 − VCE= −2V, IC= −200mA
Cob − 15 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Pulsed