1N5817-1N5819
1N5817 - 1N5819
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
A
= 25°C unless otherwise noted
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Features
• 1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Parameter Device Units
1N5817 1N5818 1N5819
Peak Repetitive Reverse Voltage 20 30 40 V
Maximum RMS Voltage 14 21 28 V
DC Reverse Voltage (Rated VR) 20 30 40 V
Maximum Reverse Current TA = 25°C
@ rated VR TA = 100°C
0.5
10
mA
mA
Maximum Forward Voltage @ 1.0 A
@ 3.0 A
450
750
550
875
600
900
mV
mV
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
110 pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol Parameter Value Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 90°C
1.0 A
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
25 A
P
D
Total Device Dissipation
Derate above 25°C
1.25
12.5
W
mW/°C
Rθ
JA
Thermal Resistance, Junction to Ambient 80 °C/W
Tstg Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature -65 to +125 °C
1.0 min (25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)