BD435
器件描述：Medium Power Linear and Switching Applications
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：44.24KB，共5页
Sponsor by e络盟器件资料摘要：
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD433/
435/
437
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 4 A
I
CP
*Collector Current (Pulse) 7 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 36 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
BD433/435/437
1
TO-126
1. Emitter 2.Collector 3.Base
BD433/
435/
437
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 4 A
I
CP
*Collector Current (Pulse) 7 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 36 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
BD433/435/437
1
TO-126
1. Emitter 2.Collector 3.Base