©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
February 2005
BAT54/A/C/S Rev. E1
BA
T5
4/A/C/S

S
c
hottk
y Diode
s
BAT54/A/C/S
Schottky Diodes
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Value Unit
V
RRM
Maximum Repetitive Reverse Voltage 30 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600 mA
T
STG
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature -55 to +150 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 290 mW
R
θJA
Thermal Resistance, Junction to Ambient 430 °C/W
Symbol Parameter Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 10µA30V
V
F
Forward Voltage I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
240
320
400
500
0.8
mV
mV
mV
mV
V
I
R
Reverse Leakage V
R
= 25V 2 µA
C
T
Total Capacitance V
R
= 1V, f = 1.0MHz 10 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
5.0 ns
12
3
L4P
1
2
3
SOT-23
BAT54
BAT54C
= L4P
= L43
BAT54A = L42
BAT54S = L44
MARKING
Connection Diagram
3
1 2
3
1 2
3
1 2
1
3
BAT54 BAT54A
BAT54SBAT54C
2NC