A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 20 mA 60 V
BV
CEO
I
C
= 50 mA 32 V
BV
EBO
I
E
= 5.0 mA 4.0 V
h
FE
V
CE
= 25 V I
C
= 3.5 A 15 100 ---
C
OB
V
CE
= 27 V f = 1.0 MHz 240 pF
P
G
η
C
V
CC
= 27 V P
OUT
= 120 W f = 150 MHz
9.0
65
dB
%
NPN SILICON RF POWER TRANSISTOR
BAM120
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
DESCRIPTION:
The ASI BAM120 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 150
MHz.
FEATURES:
• η
C
= 65 % typ. @ 120 W/150 MHz
• P
G
= 9.0 dB typ. @ 120 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
12 A
V
CES
60 V
V
EBO
4.0 V
P
DISS
140 W @ T
C
= 25

°C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.2 °C/W