1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 500
Continuous drain current ID ±8
Pulsed drain current ID(puls] ±32
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 8
Maximum Avalanche Energy EAS *1 173
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.16
Tc=25
°C
35
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3520-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=4A VGS=10V
ID=4A VDS=25V
VCC=300V ID=4A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.57
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=8A
VGS=10V
L=4.98mH Tch=25°C
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.65 0.85
3.5 7
750 1130
100 150
4.0 6.0
14 21
914
24 36
69
20 30
8.5 13
5.5 8.5
8
1.00 1.50
0.65
3.5
-55 to +150
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
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Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
0
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth(ch-c) [
o
C/W]
t [sec]
2SK3520-01MR
FUJI POWER MOSFET
IAV=f(tAV):starting Tch=25°C. Vcc=50V
A
valanche current I
AV
[A]
t
T
D=
t
T
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]