2SK2473-01 N-channel MOS-FET
FAP-II Series 300V 0,2Ω 20A 125W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 300 V
Drain-Gate-Voltage V DGR 300 V
Continous Drain Current I D 20 A
Pulsed Drain Current I D(puls) 80 A
Gate-Source-Voltage V GS 30 V
Max. Power Dissipation P D 125 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 300 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I DSS V DS =300V T ch =25°C 10 500 µA
V DS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =10A V GS =10V 0,13 0,2 Ω
Forward Transconductance g fs I D =10A V DS =25V 5 10 S
Input Capacitance C iss V DS =25V 1900 2850 pF
Output Capacitance C oss V GS =0V 400 600 pF
Reverse Transfer Capacitance C rss f=1MHz 180 270 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =150V 20 30 ns
t r I D =20A 80 120 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 100 150 ns
t f R GS =10 Ω 50 75 ns
Avalanche Capability I AV L = 100µH T ch =25°C 20 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,3 1,9 V
Reverse Recovery Time t rr I F =I DR V GS =0V 300 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 4,0 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 35 °C/W
R th(ch-c) channel to case 1,0 °C/W