Power Transistors
1
Publication date: March 2003 SJD00113AED
2SC3824, 2SC3824A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) V
CBO
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
900 V
Collector-emitter voltage (E-B short) V
CES
900 V
Collector-emitter voltage
2SC3824 V
CEO
800 V
(Base open)
2SC3824A 900
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
1A
Peak collector current I
CP
2A
Collector power P
C
15 W
dissipation T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SC3824 V
CEO
I
C
= 1 mA, I
B
= 0 800 V
(Base open)
2SC3824A 900
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 900 V, I
E
= 050µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 7 V, I
C
= µA
Forward current transfer ratio h
FE1
V
CE
= 5 V, I
C
= 0.05 A 6 
h
FE2
V
CE
= 5 V, I
C
= 0.5 A 3
Collector-emitter saturation voltage V
CE(sat)
I
C
= 0.2 A, I
B
= 0.04 A 1.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 0.2 A, I
B
= 0.04 A 1.0 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.05 A, f = 1 MHz 4 MHz
Turn-on time t
on
I
C
= 0.2 A 1.0 µs
Storage time t
stg
I
B1
= 0.04 A, I
B2
= − 0.08 A 3.0 µs
Fall time t
f
V
CC
= 250 V 1.0 µs
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.