1
Power Transistors
Publication date: February 2002 SJD00070BED
2SB1414
Silicon PNP epitaxial planar type
For low-frequency driver/high power amplification
Complementary to 2SD2134
■ Features
• Excellent current I
C
characteristics of forward current transfer ratio
h
FE
vs. collector
• High transition frequency f
T
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−150 V
Collector-emitter voltage (Base open) V
CEO
−150 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1A
Peak collector current I
CP
−1.5 A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −150 V
Emiter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= −10 V, I
C
= −150 mA 90 330 
h
FE2
V
CE
= −5 V, I
C
= −500 mA 50
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.5 −2.0 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA −1.0 −2.0 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 30 pF
(Common base, input open circuited)
Rank Q R S
h
FE1
90 to 155 130 to 220 185 to 330