A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 3.0 mA 15 V
BV
CBO
I
C
= 1.0 µA 30 V
I
CBO
V
CB
= 15 V
V
CB
= 15 V T
A
= 150
O
C
0.01
1.0
µA
BV
EBO
I
E
= 10 µA 3.0 V
h
FE
V
CE
= 1.0 V I
C
= 3.0 mA 20 ---
V
CE(SAT)
I
C
= 10 mA I
B
= 1.0 mA 0.4 V
V
BE(SAT)
I
C
= 10 mA I
B
= 1.0 mA 1.0 V
f
t
V
CE
= 10 V I
C
= 4.0 mA f = 100 MHz 600 MHz
C
ob
V
CB
= 0 V f = 140 KHz
V
CB
= 10 V f = 140 KHz
3.0
1.7
pF
C
ib
V
EB
= 0.5 V f = 140 KHz 2.0 pF
N
F
V
CE
= 6.0 V I
C
= 1.0 mA f = 60 MHz 6.0 dB
G
pe
V
CB
= 12 V I
C
= 6.0 mA f = 200 MHz 15 dB
P
out
η
V
CB
= 15 V I
C
= 8.0 mA f = 500 MHz
30
25
mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N918
DESCRIPTION:
The 2N918 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
50 mA
V
CE
15 V
P
DISS
300 mW @ T
C
= 25
O
C
200 mW @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE