1ZC100
器件描述：TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
器件厂商：TOSHIBA [Toshiba Semiconductor]
文件大小：114.47KB，共4页
Sponsor by e络盟器件资料摘要：
1ZC12~1ZC120
2001-06-13 1
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
1ZC12~1ZC120
CONSTANT VOLTAGE REGULATION
TELEPHONE, PRINTER USES
G6cG20Average Power Dissipation : P = 1.0W
G6cG20Zener Voltage : V
Z
= 12~120 V
G6cG20Tolerance of Zener Voltage (V
Z
) : ±10%
G6cG20Plastic Mold Package
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation P 1.0 W
Junction Temperature T
j
−40~150 °C
Storage Temperature Range T
stg
−40~150 °C
MARKING
JEDEC ―
EIAJ ―
TOSHIBA 3−3F2A
Weight: 0.18g (Typ.)
Unit: mm
TENTATIVE
2001-06-13 1
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
1ZC12~1ZC120
CONSTANT VOLTAGE REGULATION
TELEPHONE, PRINTER USES
G6cG20Average Power Dissipation : P = 1.0W
G6cG20Zener Voltage : V
Z
= 12~120 V
G6cG20Tolerance of Zener Voltage (V
Z
) : ±10%
G6cG20Plastic Mold Package
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation P 1.0 W
Junction Temperature T
j
−40~150 °C
Storage Temperature Range T
stg
−40~150 °C
MARKING
JEDEC ―
EIAJ ―
TOSHIBA 3−3F2A
Weight: 0.18g (Typ.)
Unit: mm
TENTATIVE