2SD2391
Transistors
Rev.A 1/3
Medium Power Transistor (60V, 2A)
2SD2391


zFeatures
1) Low saturation voltage , typically
VCE (sat) =0.13V at IC / IB =1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SB1561.








zExternal dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
60
6
2
0.5
2
150
−55 to +150
Unit
V
V
V
A
6 A
∗1
W
°C
°C
∗1 Single pulse, Pw=10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗2
∗2 When mounted on a 40 40 0.7mm ceramic board.
+ +



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE1
fT
Cob
60
60
6
−
−
−
−
−
−
−
−
−
−
0.13
210
21
−
−
−
0.1
0.1
0.35
−
−
V
V
V
µA
µA
V
MHz
pF
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=5V
IC/IB=1A/50mA
− 270 VCE/IC=−2V/−0.5A
VCE=2V, IE=−0.5A, f=100MHz
VCB=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
120
−
hFE2 − − VCE/IC=−2V/−1.5A45
−
∗
∗
∗ Measured using pulse current