Power Transistors
1
Publication date: February 2003 SJD00092BED
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage
2SC1567 V
CBO
100 V
(Emitter open)
2SC1567A 120
Collector-emitter voltage
2SC1567 V
CEO
100 V
(Base open)
2SC1567A 120
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
0.5 A
Peak collector current I
CP
1A
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SC1567 V
CEO
I
C
= 100 µA, I
B
= 0 100 V
(Base open)
2SC1567A 120
Emitter-base voltage (Collector open) V
EBO
I
E
= 1 µA, I
C
= 05
Forward current transfer ratio h
FE1
*
V
CE
= 10 V, I
C
= 150 mA 130 330 
h
FE2
V
CE
= 5 V, I
C
= 500 mA 50 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Rank R S
h
FE1
130 to 220 185 to 330