2SB1640
2004-07-26 1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640

Audio Frequency Power Amplifier



• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −2 A, IB = −0.2 A)
• Collector metal (fin) is covered with mold region.
• Complementary to 2SD2525

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−60 V
Collector-emitter voltage V
CEO
−60 V
Emitter-base voltage V
EBO
−7 V
DC I
C
−3
Collector current
Pulse I
CP
−6
A
Base current I
B
−0.5 A
Collector power dissipation P
C
1.8 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C

Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= −60 V, I
E
= 0 ― ― −10 µA
Emitter cut-off current I
EBO
V
EB
= −7 V, I
C
= 0 ― ― −10 µA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= −50 mA, I
B
= 0 −60 ― ― V
h
FE (1)
V
CE
= −5 V, I
C
= −0.5 A 100 ― 320
DC current gain
h
FE (2)
V
CE
= −5 V, I
C
= −2 A 15 ― ―

Collector-emitter saturation voltage V
CE (sat)
I
C
= −2 A, I
B
= −0.2 A ― −0.1 −1.5 V
Base-emitter voltage V
BE
V
CE
= −5 V, I
C
= −0.5 A ― −0.75 −1.0 V
Transition frequency f
T
V
CE
= −5 V, I
C
= −0.5 A ― 9 ― MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ― 50 ― pF

Marking


Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-10T1A
Weight: 1.5 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
B1640

Part No. (or abbreviation code)