2SB1590K
Transistors
Rev.A 1/2
Power Transistor (-15V, -1A)
2SB1590K


zFeatures
1) Low saturation voltage, V
CE(sat)
= -0.3V (Max.)
at I
C
/ I
B
= -0.4A / -20mA.
2) I
C
= -1A
3) Complements the 2SD2444K.


zPackaging specification and h
FE
Type 2SB1590K
SMT3
Q
BK∗
T146
3000
∗
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)

zExternal dimensions (Unit : mm)
Each lead has same dimensions
SMT3
(1)Emitter
(2)Base
(3)Collector
(2) (1)
2.81.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1



zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−15 V
V
V
A (DC)
W
−15
−6
−1
ICP A (pw=10ms)−2
0.2
150
−55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
°C
°C



zElectrical characteristics (Ta=25°C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
Min.
−15
−15
−6
−
−
−
−
−
−
−
−
−
−
−
200
15
−
−
−
−0.5
−0.5
−0.3
−
−
V IC=−50µA
IC=−1mA
IE=−50µA
VCB=−12V
VEB=−5V
IC=−0.4A, IB=−20mA
VCE=−2V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
V
V
µA
µA
hFE1 120 − 270 VCE/IC=−2V/−0.5A−
hFE2 80 − − −
V
MHz
pF
Typ. Max. Unit Conditions
VCE=−2V, IC=−800mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance