2SB1275 / 2SB1236A
Transistors
Rev.A 1/3
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A



zFeatures
1) High breakdown voltage.(BVCEO = −160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.



zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−160
−160
−5
−1.5
1
1
150
−55∼+150
Unit
V
V
V
A(DC)
−3
∗2
∗1A(Pulse)
W(Tc=25°C)
W
10
2SB1275
2SB1236A
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
∗
∗


zExternal dimensions (Unit : mm)
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SB1236A
2SB1275
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2.30.51.0 0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1



zPackaging specifications and hFE
Type 2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)



zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
−160
−160
−5
−
−
−
82
−
−
−
−
−
−
−
−
−
50
30
−
−
−
−1
−1
−2
180
−
−
V
V
V
µA
µA
V
−
hFE
82 − 270 −
2SB1275
2SB1236A
MHz
pF
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −120V
VEB = −4V
IC/IB = −1A/−0.1A
VCE = −5V , IC = −0.1A
VCE = −5V , IE = 0.1A , f = 30MHz
VCB = −10V , IE =0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗Measured using pulse current.
∗