2SB852K / 2SA830S
Transistors
Rev.A 1/3
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K / 2SA830S


zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.


zCircuit diagram
RBE 4kΩ
E : Emitter
B : Base
C : Collector
C
B
E



zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SB852K
SMT3
B
T146
3000
2SA830S
SPT
B
−
TP
5000
∗ Denotes hFE
U∗



zExternal dimensions (Unit : mm)
Each lead has same dimensions
2SB852K
(1)Emitter
(2)Base
(3)Collector
(2) (1)
2.81.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1
Taping specifications
2SA830S
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1)Emitter
(2)Collector
(3)Base
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−6
−0.3
0.22SB852K
2SA830S 0.3
150
−55 to +150
∗
Unit
V
V
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗ RBE=0Ω