2SA2070
2004-07-07 1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070

High-Speed Switching Applications
DC-DC Converter Applications


• High DC current gain: hFE = 200 to 500 (IC = -0.1 A)
• Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)
• High-speed switching: tf = 70 ns (typ.)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−7 V
DC I
C
−1.0
Collector current
Pulse I
CP
−2.0
A
Base current I
B
−0.1 A
DC 1.0
Collector power
dissipation
t = 10 s
P
C
(Note)
2.0
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)

Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= −50 V, I
E
= 0 ― ― −100 nA
Emitter cut-off current I
EBO
V
EB
= −7 V, I
C
= 0 ― ― −100 nA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= −10 mA, I
B
= 0 −50 ― ― V
h
FE
(1)

V
CE
= −2 V, I
C
= −0.1 A 200 ― 500
DC current gain
h
FE
(2)

V
CE
= −2 V, I
C
= −0.3 A 125 ― ―

Collector-emitter saturation voltage V
CE (sat)
I
C
= −0.3 A, I
B
= −0.01 mA ― ― −0.20 V
Base-emitter saturation voltage V
BE (sat)
I
C
= −0.3 A, I
B
= −0.01 mA ― ― −1.10 V
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ― 8 ― pF
Rise time t
r
― 60 ―
Storage time t
stg
― 280 ― Switching time
Fall time t
f

See Figure 1.
V
CC
≈ −30 V, R
L
= 100 Ω
I
B1
= −I
B2
= −10 mA
― 70 ―
ns



Unit: mm


JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)